inchange semiconductor product specification silicon pnp power transistors 2SB887 description ? with to-3pn package ? high dc current gain. ? large current capacity and wide aso. ? low saturation voltage. ? darlington applications ?motor drivers, printer ?hammer drivers ? relay drivers, ? voltage regulator control pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -110 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -6 v i c collector current (dc) -10 a i cm collector current-peak -15 a p c collector power dissipation t c =25 ?? 70 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2SB887 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;r be = -100 v v (br)cbo collector-base breakdown voltage i c =-5ma ;i e =0 -110 v v cesat collector-emitter saturation voltage i c =-5a; i b =-10ma -1.0 -1.5 v v besat base-emitter saturation voltage i c =-5a; i b =-10ma -2.0 v i cbo collector cut-off current v cb =-80v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -3.0 ma h fe dc current gain i c =-5a ; v ce =-3v 1500 4000 f t transition frequency i c =-5a ; v ce =-5v 20 mhz
inchange semiconductor product specification 3 silicon pnp power transistors 2SB887 package outline fig.2 outline dimensions
|